| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 120 V |
| Current Rating | 40.0 A |
| Case/Package | TO-220 |
| Drain to Source Resistance (on) (Rds) | 32.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 150 W |
| Drain to Source Voltage (Vds) | 120 V |
| Breakdown Voltage (Drain to Source) | 120 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 160 A |
| Rise Time | 63.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
Description
●This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.
●■ Exceptional dv/dt capability
●■ 100% avalanche tested
●■ Application oriented characterization
●Applications
●■ Switching application
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