TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 100 V |
Current Rating | 40.0 A |
Case/Package | TO-220 |
Drain to Source Resistance (on) (Rds) | 35.0 mΩ |
Polarity | N-Channel |
Power Dissipation | 115 W |
Drain to Source Voltage (Vds) | 100 V |
Breakdown Voltage (Drain to Source) | 100 V |
Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
Continuous Drain Current (Ids) | 40.0 A |
Rise Time | 60.0 ns |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
The STP35NF10 is a STripFET™ II N-channel Power MOSFET specifically designed to minimize input capacitance and gate charge. It is suitable as primary switch in advanced high-efficiency isolated DC-to-DC converters for telecom and computer application. It is also intended for any application with low gate charge drive requirements.
● Exceptional dV/dt capability
● 100% Avalanche tested
● Application oriented characterization
● -55 to 175°C Operating junction temperature
ST Microelectronics
14 Pages / 0.4 MByte
ST Microelectronics
20 Pages / 2.6 MByte
ST Microelectronics
4 Pages / 0.01 MByte
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1 Pages / 0.16 MByte
ST Microelectronics
Trans MOSFET N-CH 100V 40A 3Pin(3+Tab) TO-220 Tube
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