| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220 |
| Polarity | N-Channel |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The STP25NM60ND is a FDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low ON-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.
● The worldwide best RDS (ON) area amongst the fast recovery diode device
● Low gate input resistance
ST Microelectronics
21 Pages / 0.63 MByte
ST Microelectronics
1 Pages / 0.09 MByte
ST Microelectronics
4 Pages / 0.01 MByte
ST Microelectronics
N-channel 600V, 0.13Ω typ., 21A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220 package
ST Microelectronics
Trans MOSFET N-CH 600V 21A 3Pin(3+Tab) TO-220 Tube
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