| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 500 V |
| Current Rating | 20.0 A |
| Case/Package | TO-220 |
| Drain to Source Resistance (on) (Rds) | 250 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 192 W |
| Drain to Source Voltage (Vds) | 550 V |
| Breakdown Voltage (Drain to Source) | 500 V |
| Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
| Continuous Drain Current (Ids) | 20.0 A |
| Rise Time | 16.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The STP20NM50 is a MDmesh™ N-channel Power MOSFET associates the multiple drain process with PowerMESH™ horizontal layout. The device has an outstanding low ON-resistance, impressively high dV/dt and excellent avalanche characteristics and dynamic performances.
● High dV/dt and avalanche capabilities
● 100% Avalanche tested
● Low input capacitance and gate charge
● Low gate input resistance
● -65 to 150°C Operating junction temperature range
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