| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 14.0 A |
| Case/Package | TO-220 |
| Drain to Source Resistance (on) (Rds) | 420 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 190 W |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
| Continuous Drain Current (Ids) | 14.0 A |
| Rise Time | 25.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
The STP16NK60Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The new SuperMESH™ Power MOSFETS is the result of further design improvements on ST"s well-established strip based PowerMESH™ layout. In addition to significantly lower ON-resistance, the device offers superior dV/dt capability to ensure optimal performance even in the most demanding applications. The SuperMESH™ device further complements an already broad range of innovative high voltage MOSFETs, which includes the revolutionary MDmesh™ products.
● 100% Avalanche tested
● Very low intrinsic capacitance
ST Microelectronics
15 Pages / 0.72 MByte
ST Microelectronics
20 Pages / 2.6 MByte
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4 Pages / 0.01 MByte
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1 Pages / 0.12 MByte
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