| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 11.0 A |
| Case/Package | TO-220FP |
| Drain to Source Resistance (on) (Rds) | 100 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 25.0 W |
| Drain to Source Voltage (Vds) | 60.0 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 8.00 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
Description
●This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
●General features
●■ Exceptional dv/dt capability
●■ Low gate charge at 100°C
●■ Application oriented characterization
●Applications
●■ Switching application
ST Microelectronics
14 Pages / 0.31 MByte
ST Microelectronics
N-CHANNEL 60V - 0.08Ω - 16A TO-220/TO-220FP STRIPFET II POWER MOSFET
ETC
N-CHANNEL 60V - 0.08Ω - 16A TO-220/TO-220FP STripFET™ II POWER MOSFET
ST Microelectronics
N-CHANNEL 60V - 0.08Ω - 16A TO-220/TO-220FP STRIPFET II POWER MOSFET
ETC
N-CHANNEL 60V - 0.08Ω - 16A TO-220/TO-220FP STripFET™ II POWER MOSFET
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