TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 55.0 V |
Current Rating | 80.0 A |
Case/Package | TO-220 |
Drain to Source Resistance (on) (Rds) | 8.00 mΩ |
Polarity | N-Channel |
Power Dissipation | 300 W |
Drain to Source Voltage (Vds) | 55.0 V |
Breakdown Voltage (Drain to Source) | 55.0 V |
Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
Continuous Drain Current (Ids) | 80.0 A |
Rise Time | 150 ns |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Designs |
Packaging | Tube |
The STP140NF55 is a STripFET™ II N-channel Power MOSFET developed using unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
● -55 to 175°C Operating junction temperature range
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