| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 650 V |
| Current Rating | 11.0 A |
| Case/Package | TO-220-3 |
| Drain to Source Resistance (on) (Rds) | 450 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 35.0 W |
| Drain to Source Voltage (Vds) | 650 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
| Continuous Drain Current (Ids) | 11.0 A |
| Rise Time | 20.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
Description
●The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
●General features
●■ High dv/dt and avalanche capabilities
●■ 100% avalanche tested
●■ Low input capacitance and gate charge
●■ Low gate input resistance
●Applications
●■ Switching application
ST Microelectronics
16 Pages / 0.35 MByte
ST Microelectronics
0.53 MByte
ST Microelectronics
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