| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 600 V |
| Current Rating | 11.0 A |
| Case/Package | TO-220 |
| Drain to Source Resistance (on) (Rds) | 400 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 160 W |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
| Continuous Drain Current (Ids) | 11.0 A |
| Rise Time | 16.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
Description
●The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
●■ 100% avalanche tested
●■ High dv/dt and avalanche capabilities
●■ Low input capacitance and gate charge
●■ Low gate input resistance
●■ Tight process control and high manufacturing yields
●Applications
●■ Switching application
ST Microelectronics
17 Pages / 0.47 MByte
ST Microelectronics
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