| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 10.0 A |
| Case/Package | TO-220FP |
| Drain to Source Resistance (on) (Rds) | 750 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 35.0 W |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
| Continuous Drain Current (Ids) | 10.0 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The STP10NK60ZFP is a 600V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to a significant reduction in on resistance, this MOSFET is designed to ensure a high level of dv/dt capability for the most demanding applications. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.
● Extremely high dv/dt capability
● 100% Avalanche tested
● Gate charge minimized
● Zener-protected
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Power MOSFET, N Channel, 10A, 600V, 0.65Ω, 10V, 3.75V
ST Microelectronics
N-CHANNEL 600V - 0.65Ω - 10A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
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