| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -2.50 A |
| Case/Package | SOT-223 |
| Drain to Source Resistance (on) (Rds) | 200 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 2.50 W |
| Drain to Source Voltage (Vds) | 60.0 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 2.50 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
Description
●This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
●Features
●■ Extremely dv/dt capability
●■ 100% avalanche tested
●■ Application oriented characterization
●Application
●■ Switching applications
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