| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 250 mA |
| Case/Package | SOT-223 |
| Drain to Source Resistance (on) (Rds) | 15.0 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2.00 W |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
| Continuous Drain Current (Ids) | 300 mA |
| Rise Time | 5.00 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The STN1NK60Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This Power MOSFET developed using STMicroelectronics" SuperMESH™ technology, achieved through optimization of ST"s well established strip-based PowerMESH™ layout. In addition to a significant reduction in ON-resistance, this device is designed to ensure a high level of dV/dt capability for the most demanding applications.
● 100% Avalanche tested
● Improved ESD capability
ST Microelectronics
16 Pages / 0.45 MByte
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4 Pages / 0.21 MByte
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18 Pages / 0.97 MByte
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5 Pages / 0.04 MByte
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1 Pages / 0.13 MByte
ST Microelectronics
N-CHANNEL 600V - 13Ω - 0.8A TO-92/IPAK/SOT-223 ZENER-PROTECTED SUPERMESH MOSFET
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