| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 1.00 A |
| Case/Package | SOT-223 |
| Drain to Source Resistance (on) (Rds) | 800 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 2.50 W |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 500 mA |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The STN1NF10 is a STripFET™ II N-channel Power MOSFET developed using unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
● Exceptional dV/dt capability
● -55 to 150°C Operating junction temperature range
ST Microelectronics
12 Pages / 0.23 MByte
ST Microelectronics
5 Pages / 0.04 MByte
ST Microelectronics
N-CHANNEL 600V - 13Ω - 0.8A TO-92/IPAK/SOT-223 ZENER-PROTECTED SUPERMESH MOSFET
ST Microelectronics
N-CHANNEL 600V - 8Ω - 1A DPAK/IPAK/TO-92/SOT-223 SUPERMESH MOSFET
ST Microelectronics
Trans MOSFET N-CH 100V 1A 4Pin(3+Tab) SOT-223 T/R
ST Microelectronics
Trans MOSFET N-CH 200V 1A 4Pin(3+Tab) SOT-223 T/R
ST Microelectronics
Trans MOSFET N-CH 200V 1A 4Pin(3+Tab) SOT-223 T/R
ST Microelectronics
N-CHANNEL 600V 12Ω 0.3A SOT-223 POWERMESH II MOSFET
ST Microelectronics
N-CHANNEL 600V 7Ω 0.4A SOT-223 POWERMESH II MOSFET
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
