| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 400 mA |
| Case/Package | SOT-223 |
| Polarity | N-Channel |
| Power Dissipation | 3.30 W |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 500 mA |
| Rise Time | 5.00 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The STN1HNK60 is a 600V N-channel SuperMESH™ MOSFET with extreme optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.
● Extremely high dv/dt capability
● ESD improved capability
● 100% Avalanche tested
● New high voltage benchmark
● Gate charge minimized
●ESD sensitive device, take proper precaution while handling the device.
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