| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 10 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 30.0 A |
| Drain to Source Resistance (on) (Rds) | 2.90 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 5.20 W |
| Input Capacitance | 3.15 nF |
| Gate Charge | 32.5 nC |
| Drain to Source Voltage (Vds) | 30.0 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | -16.0 V to 16.0 V |
| Continuous Drain Current (Ids) | 30.0 A |
| Rise Time | 57.0 ns |
Description
●This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, moreover the double sides cooling package with ultra low junction to case thermal
●resistance allows to handle higher levels of current.
●Features
●■ Ultra low top and bottom junction to case thermal resistance
●■ Very low capacitances
●■ 100% Rg tested
●■ Fully encapsulated die
●■ 100% Matte tin finish (in compliance with the 2002/95/EC european directive)
●■ PolarPAK® is a trademark of VISHAY
●Application
●■ Switching applications
ST Microelectronics
16 Pages / 0.42 MByte
ST Microelectronics
1 Pages / 0.13 MByte
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