| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 20.0 A |
| Case/Package | PolarPAK-10 |
| Drain to Source Resistance (on) (Rds) | 7.80 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 5.20 W |
| Input Capacitance | 1.38 nF |
| Gate Charge | 13.4 nC |
| Drain to Source Voltage (Vds) | 30.0 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | -16.0 V to 16.0 V |
| Continuous Drain Current (Ids) | 20.0 A |
| Rise Time | 50.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Reel |
Description
●This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, moreover the double sides cooling package with ultra low junction to case thermal resistance allows to handle higher levels of current.
●Features
●■ Ultra low top and bottom junction to case thermal resistance
●■ Very low capacitances
●■ 100% Rg tested
●■ Fully encapsulated die
●■ 100% Matte tin finish (in compliance with the 2002/95/EC european directive)
●■ PolarPAK® is a trademark of VISHAY
●Application
●■ Switching applications
ST Microelectronics
16 Pages / 0.5 MByte
ST Microelectronics
1 Pages / 0.13 MByte
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