| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-3P-3, SC-65-3 |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
This powerful and secure STGWT60H65DFB IGBT transistor from STMicroelectronics will make sure your circuit works properly. Its maximum power dissipation is 375000 mW. It has a maximum collector emitter voltage of 650 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -40 °C to 175 °C. It is made in a single configuration.
ST Microelectronics
19 Pages / 1.53 MByte
ST Microelectronics
Trans IGBT Chip N-CH 650V 80A 375000mW 3Pin(3+Tab) TO-3P Tube
ST Microelectronics
Trans IGBT Chip N-CH 650V 80A 375000mW 3Pin(3+Tab) TO-3P Tube
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