| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247 |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The STGWA40M120DF3 is a Trench gate field-stop IGBT developed using an advanced proprietary Trench gate field-stop structure. The device is part of the M series of IGBT, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
● Tight parameters distribution
● Safer paralleling
● Low thermal resistance
● Soft and fast recovery anti-parallel diode
● 10µs Short-circuit withstand time
ST Microelectronics
18 Pages / 1 MByte
ST Microelectronics
2 Pages / 0.27 MByte
ST Microelectronics
35 Pages / 2.4 MByte
ST Microelectronics
Trans IGBT Chip N-CH 1200V 80A 468000mW 3Pin(3+Tab) TO-247 Tube
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