| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-247-3 |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
This fast-switching STGW80H65DFB IGBT transistor from STMicroelectronics will be perfect in your circuit. Its maximum power dissipation is 469000 mW. It has a maximum collector emitter voltage of 650 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
ST Microelectronics
22 Pages / 1.42 MByte
ST Microelectronics
Trans IGBT Chip N-CH 650V 120A 469000mW 3Pin(3+Tab) TO-247 Tube
ST Microelectronics
Trans IGBT Chip N-CH 650V 120A 469000mW 3Pin(3+Tab) TO-247 Tube
ST Microelectronics
Trans IGBT Chip N-CH 650V 120A 469000mW 4Pin(4+Tab) TO-247 Tube
ST Microelectronics
Trans IGBT Chip N-CH 650V 120A 469000mW 4Pin(4+Tab) TO-247 Tube
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