| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-247-3 |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The STGW40H65DFB IGBT transistor from STMicroelectronics is the best electronic switch for fast switching. It has a maximum collector emitter voltage of 650 V. Its maximum power dissipation is 283000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. It is made in a single configuration. This device utilizes field stop|trench technology.
ST Microelectronics
19 Pages / 1.03 MByte
ST Microelectronics
Trans IGBT Chip N-CH 650V 80A 283000mW 3Pin(3+Tab) TO-247 Tube
ST Microelectronics
Trans IGBT Chip N-CH 650V 80A 283000mW 3Pin(3+Tab) TO-247 Tube
ST Microelectronics
Trans IGBT Chip N-CH 650V 80A 283000mW 4Pin(4+Tab) TO-247 Tube
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