| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 40.0 A |
| Case/Package | TO-247 |
| Polarity | N-Channel |
| Power Dissipation | 250 W |
| Gate Charge | 126 nC |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 40.0 A |
| Rise Time | 13.0 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The STGW39NC60VD is a 600V Very Fast IGBT that utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behaviour. The IGBT is well suited for UPS, high frequency inverters and induction heating applications. Improved switch-off energy spread versus increasing temperature result in reduced switching losses.
● Lower CRES/CIES ratio (no cross-conduction susceptibility)
● Ultra fast freewheeling diode
● Low VCE (sat) for reduced conduction losses
● Tight parameter distribution for design simplification and easy paralleling
ST Microelectronics
15 Pages / 0.41 MByte
ST Microelectronics
20 Pages / 2.6 MByte
ST Microelectronics
IGBT Single Transistor, 80A, 2.5V, 250W, 600V, TO-247, 3Pins
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