| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-247 |
| Polarity | N-Channel |
| Power Dissipation | 250 W |
| Rise Time | 11.0 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
This STGW30NC60VD IGBT transistor from STMicroelectronics is perfect if your circuit contains high currents passing through it. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 250000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
ST Microelectronics
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ST Microelectronics
1 Pages / 0.13 MByte
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