| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-247-3 |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
Minimize the current at your gate with the STGW30H60DFB IGBT transistor from STMicroelectronics. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 260000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes field stop|trench technology. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C.
ST Microelectronics
18 Pages / 1.37 MByte
ST Microelectronics
18 Pages / 1.46 MByte
ST Microelectronics
Trans IGBT Chip N-CH 600V 60A 260000mW 3Pin(3+Tab) TO-247 Tube
ST Microelectronics
Trans IGBT Chip N-CH 600V 60A 260000mW 3Pin(3+Tab) TO-247 Tube
ST Microelectronics
Trans IGBT Chip N-CH 600V 60A 260000mW 3Pin(3+Tab) TO-247 Tube
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