| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 6.00 A |
| Case/Package | TO-220FP |
| Polarity | N-Channel |
| Power Dissipation | 25.0 W |
| Rise Time | 8.50 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The STGF7NC60HD IGBT transistor from STMicroelectronics is perfect to use as an electronic switch eliminating the current at the gate. Its maximum power dissipation is 25000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
ST Microelectronics
22 Pages / 1.32 MByte
ST Microelectronics
1.3 MByte
ST Microelectronics
1 Pages / 0.13 MByte
ST Microelectronics
Trans IGBT Chip N-CH 600V 10A 25000mW 3Pin(3+Tab) TO-220FP Tube
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