| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 1.20 kV |
| Current Rating | 3.00 A |
| Case/Package | TO-220FP |
| Polarity | N-Channel |
| Power Dissipation | 25.0 W |
| Rise Time | 3.50 ns |
| Breakdown Voltage (Collector to Emitter) | 1.20 kV |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The STGF3NC120HD is a very fast IGBT with ultrafast diode. This high voltage and very fast IGBT shows an excellent trade-off between low conduction losses and fast switching performance. It is designed in PowerMESH™ technology combined with high voltage ultrafast diode.
● High voltage capability
● High speed
● Very soft ultrafast recovery anti-parallel diode
ST Microelectronics
16 Pages / 0.74 MByte
ST Microelectronics
20 Pages / 2.6 MByte
ST Microelectronics
1 Pages / 0.13 MByte
ST Microelectronics
IGBT Single Transistor, 6A, 2.8V, 25W, 1.2kV, TO-220FP, 3Pins
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