| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 9.00 A |
| Case/Package | TO-220FP |
| Polarity | N-Channel |
| Power Dissipation | 25.0 W |
| Rise Time | 6.00 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The STGF10NC60KD is a short-circuit rugged IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low ON-state behaviour. It is suitable for SMPS and PFC in both hard switch and resonant topologies.
● Low on-voltage drop (VCE(sat))
● Low CRES/CIES ratio (no cross-conduction susceptibility)
● Very soft ultrafast recovery anti-parallel diode
● 10µs Short-circuit withstand time
ST Microelectronics
30 Pages / 1.61 MByte
ST Microelectronics
20 Pages / 2.6 MByte
ST Microelectronics
1 Pages / 0.13 MByte
ST Microelectronics
Trans IGBT Chip N-CH 600V 9A 25000mW 3Pin(3+Tab) TO-220FP Tube
ST Microelectronics
Trans IGBT Chip N-CH 600V 9A 24000mW 3Pin(3+Tab) TO-220FP Tube
ST Microelectronics
Trans IGBT Chip N-CH 600V 10A 25000mW 3Pin(3+Tab) TO-220FP Tube
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