TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 Full Pack |
Polarity | N-Channel |
Power Dissipation | 23.0 W |
Rise Time | 6.00 ns |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
The STGF10NC60HD is a Very Fast IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low ON-state behaviour. It is suitable for SMPS and PFC in both hard switch and resonant topologies.
● Low on-voltage drop (VCE(sat))
● Low CRES/CIES ratio (no cross-conduction susceptibility)
● Very soft ultrafast recovery anti-parallel diode
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Trans IGBT Chip N-CH 600V 9A 25000mW 3Pin(3+Tab) TO-220FP Tube
ST Microelectronics
Trans IGBT Chip N-CH 600V 9A 24000mW 3Pin(3+Tab) TO-220FP Tube
ST Microelectronics
Trans IGBT Chip N-CH 600V 10A 25000mW 3Pin(3+Tab) TO-220FP Tube
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