| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-220-3 Full Pack |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
You won"t need to worry about any lagging in your circuit with this STGF10H60DF IGBT transistor from STMicroelectronics. Its maximum power dissipation is 30000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with field stop|trench technology. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
ST Microelectronics
24 Pages / 1.68 MByte
ST Microelectronics
Trans IGBT Chip N-CH 600V 20A 30000mW 3Pin(3+Tab) TO-220FP Tube
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