| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | ISOTOP |
| Polarity | N-Channel |
| Power Dissipation | 260 W |
| Rise Time | 17.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The STGE50NC60VD is a very fast IGBT using the latest high voltage technology based on a patented strip layout. STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBT with outstanding performances. The suffix V identifies a family optimized for high frequency. It is suitable for high frequency inverters, SMPS and PFC in both hard switching and resonant topologies.
● High current capability
● High frequency operation
● Low CRES/CIES ratio (no cross-conduction susceptibility)
● Very soft ultra fast recovery anti-parallel diode
ST Microelectronics
14 Pages / 0.52 MByte
ST Microelectronics
2 Pages / 0.68 MByte
ST Microelectronics
Trans IGBT Chip N-CH 600V 80A 260000mW 4Pin ISOTOP Tube
ST Microelectronics
Trans IGBT Chip N-CH 600V 100A 260000mW 4Pin ISOTOP Tube
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
