| TYPE | DESCRIPTION |
|---|
| Mounting Style | Screw |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 150 A |
| Case/Package | ISOTOP |
| Polarity | N-Channel |
| Power Dissipation | 600 W |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 200 A |
| Rise Time | 112 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The STGE200NB60S is a N-channel low drop PowerMESH™ IGBT using the latest high voltage technology based on a patented strip layout. STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBT with outstanding performances. The suffix S identifies a family optimized to achieve very low VCE(sat) (at maximum frequency of 1kHz).
● High input impedance (voltage driven)
● Low on-voltage drop (Vcesat)
● Off losses include tail current
● Low gate charge
● High current capability
ST Microelectronics
13 Pages / 0.26 MByte
ST Microelectronics
2 Pages / 0.68 MByte
ST Microelectronics
Trans IGBT Chip N-CH 600V 200A 600000mW 4Pin ISOTOP Tube
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