| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Voltage Rating (DC) | 600 V |
| Current Rating | 15.0 A |
| Case/Package | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Power Dissipation | 50.0 W |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Reel |
This STGD6NC60HDT4 IGBT transistor from STMicroelectronics will work perfectly in your circuit. Its maximum power dissipation is 56000 mW. It has a maximum collector emitter voltage of 600 V. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
ST Microelectronics
15 Pages / 0.45 MByte
ST Microelectronics
1 Pages / 0.13 MByte
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Trans IGBT Chip N-CH 600V 15A 56000mW 3Pin(2+Tab) DPAK T/R
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