TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Polarity | N-Channel |
Rise Time | 6.50 ns |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Reel |
This STGD10NC60KDT4 IGBT transistor from STMicroelectronics is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 62000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
ST Microelectronics
20 Pages / 0.59 MByte
ST Microelectronics
1 Pages / 0.13 MByte
ST Microelectronics
Trans IGBT Chip N-CH 600V 20A 62000mW 3Pin(2+Tab) DPAK T/R
ST Microelectronics
Trans IGBT Chip N-CH 600V 20A 65000mW 3Pin(2+Tab) DPAK T/R
ST Microelectronics
Trans IGBT Chip N-CH 600V 18A 60000mW 3Pin(2+Tab) DPAK T/R
ST Microelectronics
Trans IGBT Chip N-CH 600V 18A 3Pin(2+Tab) DPAK T/R
ST Microelectronics
Trans IGBT Chip N-CH 600V 20A 60000mW 3Pin(2+Tab) DPAK T/R
ST Microelectronics
Trans IGBT Chip N-CH 600V 20A 60000mW 3Pin(2+Tab) DPAK T/R
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.