| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
Use the STGB19NC60KDT4 IGBT transistor from STMicroelectronics as an electronic switch. Its maximum power dissipation is 125000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
ST Microelectronics
19 Pages / 1 MByte
ST Microelectronics
Trans IGBT Chip N-CH 600V 40A 130000mW 3Pin(2+Tab) D2PAK T/R
ST Microelectronics
Trans IGBT Chip N-CH 600V 35A 125000mW 3Pin(2+Tab) D2PAK T/R
ST Microelectronics
Trans IGBT Chip N-CH 600V 35A 3Pin(2+Tab) D2PAK T/R
ST Microelectronics
Trans IGBT Chip N-CH 600V 40A 3Pin(2+Tab) D2PAK T/R
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