| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Reel |
You won"t need to worry about any lagging in your circuit with this STGB19NC60HDT4 IGBT transistor from STMicroelectronics. Its maximum power dissipation is 130000 mW. It has a maximum collector emitter voltage of 600 V. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
ST Microelectronics
19 Pages / 0.94 MByte
ST Microelectronics
1 Pages / 0.13 MByte
ST Microelectronics
Trans IGBT Chip N-CH 600V 40A 130000mW 3Pin(2+Tab) D2PAK T/R
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ST Microelectronics
Trans IGBT Chip N-CH 600V 35A 3Pin(2+Tab) D2PAK T/R
ST Microelectronics
Trans IGBT Chip N-CH 600V 40A 3Pin(2+Tab) D2PAK T/R
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