| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Reel |
The STGB18N40LZT4 is an internally clamped IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diode between gate-collector and gate-emitter provide overvoltage protection capabilities. The device also exhibits low ON-state voltage drop and low threshold drive for use in automotive ignition system. It is suitable for pencil coil electronic ignition drive.
● ESD gate-emitter protection
● Gate-collector high voltage clamping
● Logic level gate drive
● Low saturation voltage
● High pulsed current capability
● Gate and gate-emitter resistor
● 180mJ Avalanche energy @ TC = 150°C, L = 3mH
ST Microelectronics
1 Pages / 0.15 MByte
ST Microelectronics
10 Pages / 0.75 MByte
ST Microelectronics
STMICROELECTRONICS STGB18N40LZT4 IGBT Single Transistor, 30A, 1.35V, 150W, 390V, TO-263, 3Pins
ST Microelectronics
Trans IGBT Chip N-CH 360V 30A 3Pin(3+Tab) I2PAK Tube
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