TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | D2PAK |
Polarity | N-Channel |
Power Dissipation | 65.0 W |
Rise Time | 5.00 ns |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Reel |
The STGB10NC60HDT4 is a Very Fast IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low ON-state behaviour. It is suitable for SMPS and PFC in both hard switch and resonant topologies.
● Low on-voltage drop (VCE(sat))
● Low CRES/CIES ratio (no cross-conduction susceptibility)
● Very soft ultrafast recovery anti-parallel diode
ST Microelectronics
19 Pages / 0.74 MByte
ST Microelectronics
1 Pages / 0.42 MByte
ST Microelectronics
1 Pages / 0.13 MByte
ST Microelectronics
STMICROELECTRONICS STGB10NC60HDT4 IGBT Single Transistor, 10A, 2.5V, 65W, 600V, TO-263, 3Pins
ST Microelectronics
IGBT Single Transistor, 10A, 2.5V, 60W, 600V, TO-263, 3Pins
ST Microelectronics
Trans IGBT Chip N-CH 600V 20A 65000mW 3Pin(2+Tab) D2PAK T/R
ST Microelectronics
Trans IGBT Chip N-CH 600V 20A 3Pin (2+Tab) D2PAK
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.