| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 7.00 A |
| Drain to Source Resistance (on) (Rds) | 950 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 30.0 W |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
| Continuous Drain Current (Ids) | 7.00 A |
| Rise Time | 17.0 ns |
Description
●The SuperFREDMesh™ series associates all advantages of reduced on-resistance, zener gate protection and very high dv/dt capability with a Fast body-drain recovery diode. Such series complements the “FDmesh™” advanced technology.
●■ Very high dv/dt capability
●■ 100% avalanche tested
●■ Gate charge minimized
●■ Low intrinsic capacitances
●■ Fast internal recovery diode
ST Microelectronics
16 Pages / 0.4 MByte
ST Microelectronics
N-CHANNEL 600V - 0.85Ω - 7A TO-220/TO-220FP/D2PAK FAST DIODE SUPERMESH MOSFET
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