| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-220-3 |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 600V |
| Continuous Drain Current (Ids) | 5.5A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
Make an effective common gate amplifier using this STF9N60M2 power MOSFET from STMicroelectronics. Its maximum power dissipation is 20000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with mdmesh ii technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
ST Microelectronics
15 Pages / 0.85 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
