TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220FP |
Polarity | N-Channel |
Drain to Source Voltage (Vds) | 600V |
Continuous Drain Current (Ids) | 17A |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
The STF21NM60ND is a FDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low ON-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.
● Worldwide best RDS (ON) area amongst the fast recovery diode devices
● 100% Avalanche tested
● Low gate input resistance
● Extremely high dV/dt and avalanche capabilities
ST Microelectronics
18 Pages / 0.54 MByte
ST Microelectronics
1 Pages / 0.09 MByte
ST Microelectronics
21 Pages / 1.35 MByte
ST Microelectronics
34 Pages / 0.79 MByte
ST Microelectronics
Trans MOSFET N-CH 600V 17A 3Pin(3+Tab) TO-220FP Tube
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