| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220FP |
| Polarity | N-Channel |
| Power Dissipation | 28.0 W |
| Drain to Source Voltage (Vds) | 60V |
| Continuous Drain Current (Ids) | 10.0 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tube |
Description
●This Power MOSFET is the latest development of STMicroelectronics unique “single feature size”™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
●General features
●■ Avalanche rugged technology
●■ 100% avalanche tested
●■ 175°C operating temperature
●■ High dv/dt capability
●■ application oriented characterization
●Applications
●■ Switching application
ST Microelectronics
16 Pages / 0.38 MByte
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