| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220FP |
| Polarity | N-Channel |
| Power Dissipation | 25.0 W |
| Continuous Drain Current (Ids) | 7.50 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
Description
●This Power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with
●standard parts from various sources.
●■ Extremely high dv/dt capability
●■ Gate charge minimized
●■ Very low intrinsic capacitances
ST Microelectronics
0.5 MByte
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27 Pages / 1.02 MByte
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5 Pages / 0.04 MByte
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