TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 500 V |
Current Rating | 9.00 A |
Case/Package | TO-220FP |
Drain to Source Resistance (on) (Rds) | 550 mΩ |
Polarity | N-Channel |
Power Dissipation | 30.0 W |
Drain to Source Voltage (Vds) | 500 V |
Breakdown Voltage (Drain to Source) | 500 V |
Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
Continuous Drain Current (Ids) | 4.50 A |
Rise Time | 17.0 ns |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Designs |
Packaging | Tube |
DESCRIPTION
●The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOS FETs including revolutionary MDmesh™ products.
●■ TYPICAL RDS(on) = 0.55 Ω
●■ EXTREMELY HIGH dv/dt CAPABILITY
●■ 100% AVALANCHE TESTED
●■ GATE CHARGE MINIMIZED
●■ VERY LOW INTRINSIC CAPACITANCES
●■ VERY GOOD MANUFACTURING REPEATIBILITY
●APPLICATIONS
●■ HIGH CURRENT, HIGH SPEED SWITCHING
●■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
●■ LIGHTING
ST Microelectronics
12 Pages / 0.51 MByte
ST Microelectronics
13 Pages / 0.5 MByte
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