| TYPE | DESCRIPTION |
|---|
| Mounting Style | Screw |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 500 V |
| Current Rating | 53.0 A |
| Case/Package | ISOTOP-4 |
| Drain to Source Resistance (on) (Rds) | 80.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 460 W |
| Drain to Source Voltage (Vds) | 500 V |
| Breakdown Voltage (Drain to Source) | 500 V |
| Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
| Continuous Drain Current (Ids) | 53.0 A |
| Rise Time | 70.0 ns |
| Isolation Voltage | 2.50 kV |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The STE53NC50 is a 500V N-channel PowerMesh™II MOSFET with extremely high dv/dt capability. The layout refinements introduced greatly improve the area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. The MOSFET is used in DC-AC converters, welding equipment and uninterruptible power supplies.
● 100% Avalanche tested
● New high voltage benchmark
● Gate charge minimized
● High peak power
● High ruggedness capability
ST Microelectronics
8 Pages / 0.27 MByte
ST Microelectronics
1 Pages / 0.13 MByte
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