| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 200 V |
| Current Rating | 7.00 A |
| Case/Package | TO-252 |
| Drain to Source Resistance (on) (Rds) | 350 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 45.0 W |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 7.00 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape |
The STD7NS20T4 is a MESH OVERLAY™ N-channel Power MOSFET offers outstanding performance. The device layout coupled with the proprietary edge termination structure, makes it suitable in converters for lighting applications.
● 0.35R RDS (ON)
● Extremely high dV/dt capability
● 100% Avalanche tested
● Very low intrinsic capacitances
ST Microelectronics
8 Pages / 0.31 MByte
ST Microelectronics
N-CHANNEL 200V - 0.35Ω - 7A DPAK / IPAK MESH OVERLAY⑩ MOSFET
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