| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | TO-252-3 |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 600V |
| Continuous Drain Current (Ids) | 4.5A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Reel |
Description
●These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company"s strip layout to yield one of the world"s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.
●Features
●• Extremely low gate charge
●• Lower RDS(on) x area vs previous generation
●• Low gate input resistance
●• 100% avalanche tested
●• Zener-protected
●Applications
●• Switching applications
ST Microelectronics
1.08 MByte
ST Microelectronics
21 Pages / 1.05 MByte
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