| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 500 V |
| Current Rating | 7.50 A |
| Case/Package | TO-252 |
| Drain to Source Resistance (on) (Rds) | 800 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 100 W |
| Drain to Source Voltage (Vds) | 500 V |
| Breakdown Voltage (Drain to Source) | 500 V |
| Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
| Continuous Drain Current (Ids) | 7.50 A |
| Rise Time | 8.00 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The STD5NM50T4 is a MDmesh™ N-channel Power MOSFET associates the multiple drain process with PowerMESH™ horizontal layout. The device has an outstanding low On-resistance, impressively high dV/dt and excellent avalanche characteristics. The strip technique yields overall dynamic performance. It is suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
● 0.7R RDS (ON)
● High dV/dt and avalanche capabilities
● 100% Avalanche tested
● Low input capacitance and gate charge
● Low gate input resistance
● Tight process control and high manufacturing yields
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