| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-251AA |
| Polarity | N-Channel |
| Power Dissipation | 45.0 W |
| Drain to Source Voltage (Vds) | 600V |
| Continuous Drain Current (Ids) | 2.00 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The STD2HNK60Z-1 is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics SuperMESH™ technology, achieved through optimization of ST"s well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
● Gate charge minimized
● 100% avalanche tested
● Extremely high dv/dt capability
● ESD improved capability
● New high voltage benchmark
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