| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | DPAK |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 550V |
| Continuous Drain Current (Ids) | 16A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Reel |
The STD18N55M5 is a MDmesh™ V N-channel Power MOSFET based on an innovative proprietary vertical process technology with PowerMESH™ horizontal layout structure. The device has extremely low ON-resistance, which is unmatched among silicon based power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
● Higher VDSS rating
● High dV/dt capability
● Excellent switching performance
● Easy to drive
● 100% Avalanche tested
● -55 to 150°C Operating junction temperature range
ST Microelectronics
22 Pages / 1.21 MByte
ST Microelectronics
3 Pages / 0.31 MByte
ST Microelectronics
24 Pages / 1.5 MByte
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