TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 30.0 V |
Current Rating | 17.0 A |
Case/Package | TO-252 |
Drain to Source Resistance (on) (Rds) | 38.0 mΩ |
Polarity | N-Channel |
Power Dissipation | 30.0 W |
Drain to Source Voltage (Vds) | 30.0 V |
Breakdown Voltage (Drain to Source) | 30.0 V |
Breakdown Voltage (Gate to Source) | -16.0 V to 16.0 V |
Continuous Drain Current (Ids) | 17.0 A |
Rise Time | 100 ns |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Cut Tape (CT) |
The STD17NF03LT4 is a STripFET™ II N-channel Power MOSFET developed using STMicroelectronics unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
● Exceptional dV/dt capability
● Low gate charge at 100°C
● Application oriented characterization
● 100% Avalanche tested
● -55 to 175°C Operating junction temperature range
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