| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 12.0 A |
| Case/Package | TO-252 |
| Drain to Source Resistance (on) (Rds) | 100 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 30.0 W |
| Drain to Source Voltage (Vds) | 60.0 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Breakdown Voltage (Gate to Source) | -16.0 V to 16.0 V |
| Continuous Drain Current (Ids) | 12.0 A |
| Rise Time | 35.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The STD12NF06LT4 is a STripFET™ II N-channel Power MOSFET specifically designed to minimize input capacitance and gate charge. The device suitable for use as primary switch in advanced high-efficiency isolated DC-to-DC converters. It is used in telecom and computer applications and applications with low gate charge driving requirements.
● AEC-Q101 qualified
● Exceptional dV/dt capability
● Low gate charge
● -55 to 175°C Operating junction temperature
ST Microelectronics
14 Pages / 0.3 MByte
ST Microelectronics
16 Pages / 0.82 MByte
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5 Pages / 0.04 MByte
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N-CHANNEL 60V - 0.08Ω - 12A IPAK/DPAK STRIPFET II POWER MOSFET
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